Manufacturing method of thin film transistor substrate for liquid crystal display device

专利摘要:
A gate electrode and a common electrode line are formed on the transparent insulating substrate, and then the gate insulating film, the amorphous silicon layer, and the doped amorphous silicon layer are sequentially stacked and patterned thereon. After forming the lower ITO electrode, the source and drain electrodes are formed, wherein the drain electrode is connected with the lower ITO electrode. After the protective film is deposited thereon, blue, red and green color filters are applied to form a pattern in units of pixels. At this time, the protective film and the color filter are formed to have contact holes for exposing the lower ITO electrode. An ITO metal is deposited thereon to form a pixel electrode connected to the lower ITO. In such a method of manufacturing a thin film transistor substrate, a color filter serving as an insulating film instead of an organic insulating film is formed under the ITO pixel electrode, and an insulating film can also be formed simultaneously as a mask for forming the color filter, thus being used in all processes. Can be reduced.
公开号:KR19990059999A
申请号:KR1019970080217
申请日:1997-12-31
公开日:1999-07-26
发明作者:김상갑
申请人:윤종용；삼성전자 주식회사；
IPC主号:

专利说明:

Manufacturing method of thin film transistor substrate for liquid crystal display device
The present invention relates to a liquid crystal display device, and more particularly, to a method for manufacturing a thin film transistor substrate for a liquid crystal display device.
There are various methods of manufacturing the liquid crystal display device, and are manufactured using a plurality of masks depending on the number of steps.
Then, the manufacturing method of the thin film transistor substrate for liquid crystal display devices which concerns on a prior art is demonstrated.
First, a gate wiring including a gate electrode, a gate line, and a common electrode line is formed on a transparent insulating substrate, and a gate insulating film, an amorphous silicon layer, and a doped amorphous silicon layer are sequentially stacked thereon. The doped amorphous silicon layer and the amorphous silicon layer are patterned and then etched by patterning the insulating film at the gate pad region. Next, after forming the lower ITO electrode, a metal layer is deposited and then patterned to form data lines, source and drain electrodes. A protective film and an organic insulating film are deposited thereon and patterned thereon to form a contact hole exposing the lower ITO electrode. Next, an ITO pixel electrode is formed on the organic insulating layer and connected to the lower ITO electrode through the contact hole.
Seven masks are used in the method of manufacturing a thin film transistor substrate for a liquid crystal display, and a small number of masks is preferably used for cost reduction and process simplification.
In order to solve this problem, the present invention provides a method for manufacturing a thin film transistor substrate for a liquid crystal display device using a small number of masks.
4B, which is a cross section of cut line A-A 'in FIGS. 1A and 1A, and FIG. 4B, which is a cross section of cut line A-A' in FIGS. It is sectional drawing which shows the manufacturing method of in order.
In order to solve this problem, the present invention forms a pattern together with the protective film after depositing a color filter instead of the organic insulating film formed on the protective film. In this way, the color filter acts as an organic insulating film, so that only one mask can be used without using two masks as in the case of forming the color filter and the organic insulating film, respectively. In this case, it is possible to reduce the number of masks used, thus simplifying cost reduction and processing.
Then, with reference to the accompanying drawings will be described in detail to be easily carried out by those of ordinary skill in the art with respect to the embodiment according to the present invention.
1A to 1B are flowcharts illustrating a method of manufacturing a thin film transistor substrate for a liquid crystal display according to an exemplary embodiment of the present invention, and FIG. 2 is a cross-sectional view taken along line AA ′ of FIG. 1.
First, as shown in FIGS. 1A and 1B, a gate electrode 101 and a common electrode line 102 are patterned on a transparent insulating substrate 100 using a first mask using a low resistance metal, and then a gate is formed thereon. The insulating film 110, the amorphous silicon layer 120, and the doped amorphous silicon layer 130 are sequentially stacked. In this case, instead of the doped amorphous silicon layer 130, fine crystallized silicon may be used. 2A and 2B, the doped amorphous silicon layer 130 and the amorphous silicon layer 120 are patterned using a second mask. Next, although not shown in the drawing, the gate insulating film of the gate pad portion is patterned with a third mask and then etched. As can be seen in FIGS. 3A and 3B, after forming the lower ITO electrode 140 using the fourth mask, the metal layers are stacked and patterned using the fifth mask to form the data line 150, the source and the drain. After forming the electrodes 151 and 152, the doped amorphous silicon layer exposed between the source and drain electrodes is etched. The drain electrode 152 is connected to the lower ITO electrode 140. A protective film 160 is stacked on the source and drain electrodes 151 and 152 and, as shown in FIGS. 4A and 4B, using a sixth mask, a blue and red hole having a hole 400 exposing the lower ITO electrode is exposed. After forming the green color filter in pixel units, the exposed protective film is etched. Next, an ITO layer is deposited and patterned using a seventh mask to form the pixel electrode 180.
As such, the number of masks used may be reduced by performing the color filter 170 forming process and the organic insulating film forming process formed under the ITO pixel electrode 180 in one single photolithography process.
As mentioned above, by forming the color filter in place of the organic insulating film so that the color filter acts as the insulating film at the same time under the ITO pixel electrode, the number of masks used can be reduced, thus reducing the production cost and the process Can be simplified.

权利要求:
Claims (4)
[1" claim-type="Currently amended] Forming a gate line, a gate electrode and a common electrode line on the transparent insulating substrate,
Stacking the gate insulating layer and the semiconductor layer,
Forming a transparent electrode,
Forming a data line, a source electrode, and a drain electrode connected to the transparent electrode;
Etching the semiconductor layer;
Forming a protective film,
Applying a color filter to form a pattern,
Forming a pixel electrode connected to the transparent electrode
Method of manufacturing a thin film transistor for a liquid crystal display device comprising a.
[2" claim-type="Currently amended] In claim 1,
And the color filter is formed to have a hole through which the transparent electrode and the upper ITO electrode can contact each other.
[3" claim-type="Currently amended] In claim 2,
The color filter is a method of manufacturing a thin film transistor substrate formed by patterning the pixel unit of blue, red, green.
[4" claim-type="Currently amended] A thin film transistor liquid crystal display manufactured by the method of claim 3.

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同族专利:

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引用文献:

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公开号 | 申请日 | 公开日 | 申请人 | 专利标题

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法律状态:
1997-12-31|Application filed by 윤종용, 삼성전자 주식회사

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1997-12-31|Priority to KR1019970080217A

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1999-07-26|Publication of KR19990059999A

优先权:

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申请号 | 申请日 | 专利标题

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KR1019970080217A|KR19990059999A|1997-12-31|1997-12-31|Manufacturing method of thin film transistor substrate for liquid crystal display device|